Накопление структурных нарушений при облучении α-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- ионами P и PF-=SUB=-4-=/SUB=-

نویسندگان

چکیده

We study radiation damage accumulation in alphapolymorph of gallium oxide (α-Ga2O3) epitaxial layers under irradiation with 40 keV monatomic P and 140 molecular PF4 ions. The distribution stable structural is bimodal both cases. growth rate the surface disordered layer ion significantly higher than that bombardment. At same time, more efficient bulk defect peak formation. Thus, density displacement cascades strongly affects formation α-gallium oxide. doses required to create level disorder metastable α-polymorph are thermodynamically β-Ga2O3. Mechanisms these polymorphs different.

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ژورنال

عنوان ژورنال: Fizika i tehnika poluprovodnikov

سال: 2022

ISSN: ['0015-3222', '1726-7315']

DOI: https://doi.org/10.21883/ftp.2022.09.53409.9928